SSP20N60S Datasheet - Super Semiconductor

SSP20N60S 600V N-Channel MOSFET

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs.

SSP20N60S Features

* 650V @TJ = 150°C

* Typ. RDS(on) = 0.16 

* Ultra Low Gate Charge (typ. Qg = 70nC)

* 100% avalanche tested D GDS TO-220 GD S TO-220F G S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain

SSP20N60S Datasheet (586.33 KB)