SSP1N60B

N-Channel MOSFET

Fairchild Semiconductor

SSP1N60B Features

* 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum R

SSP1N60B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSP1N60B Datasheet (879.19 KB)

SSP1N60B Datasheet Preview — Preview of SSP1N60B PDF

Datasheet Details

Part number:

SSP1N60B

Manufacturer:

Fairchild Semiconductor

File Size:

879.19 KB

Description:

N-channel mosfet.

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SSP1N60B N-Channel MOSFET Fairchild Semiconductor

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SSP1N60B Features

SSP1N60B General Description

Datasheet Details

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Description:

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