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SSP10N60B 600V N-Channel MOSFET

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Description

www.DataSheet4U.com SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number
SSP10N60B
Manufacturer
Fairchild Semiconductor
File Size
935.69 KB
Datasheet
SSP10N60B_FairchildSemiconductor.pdf
Description
600V N-Channel MOSFET

Features

* 9.0A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ra

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