SSP10N60B Datasheet - Fairchild Semiconductor

SSP10N60B - 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSP10N60B Features

* 9.0A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ra

SSP10N60B_FairchildSemiconductor.pdf

SSP10N60B Datasheet Preview — Preview of SSP10N60B PDF

Datasheet Details

Part number:

SSP10N60B

Manufacturer:

Fairchild Semiconductor

File Size:

935.69 KB

Description:

600v n-channel mosfet.

SSP10N60B Distributor

📁 Related Datasheet

SSP10N60A SSP100 SSP11N60C2 SSP1601 SSP1837 SSP1N50A

📌 All Tags

SSP10N60B 600V N-Channel MOSFET Fairchild Semiconductor