SST2610 N-Channel Enhancement Mode Power MosFET

SeCoS

Description

www.DataSheet4U.com SST2610 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A su.
z z The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

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Datasheet Specifications

Part number: SST2610
Manufacturer: SeCoS
File Size: 1.51 MB
Datasheet: SST2610_SeCoS.pdf
Description: N-Channel Enhancement Mode Power MosFET

Applications

* APPLICATIONS z z Low on-resistance Capable of 2.5V gate drive PACKAGE INFORMATION REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 0.30 0.55 0 0.10 0 10 REF. G H I J K L Millimeter Min. Max. 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. ABSOLUTE MAXIMUM RATI

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SST2610 N-Channel Enhancement Mode Power MosFET SeCoS

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