2N2845
Seme LAB
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Bipolar npn device.
2N2845
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package.
📁 Related Datasheet
2N2843 - p-channel JFET
(Siliconix)
p-cha.,.nel JFETs
designed for • • •
• Small-Siglllal Amplifiers
H
Performance Curves PC PD See Section 4
BENEFITS • Low Supply Voltage Operation
V G.
2N2844 - Small-Signal Amplifiers
(Siliconix)
p-cha.,.nel JFETs
designed for • • •
• Small-Siglllal Amplifiers
H
Performance Curves PC PD See Section 4
BENEFITS • Low Supply Voltage Operation
V G.
2N2845 - NPN Transistor
(Motorola)
2N2845 thru 2N2848 (SILlC()N)
CASE 22
(TO-18)
2N2845 2N2847
NPN silicon annular transistors designed for highspeed, medium-power saturated switching.
2N2846 - NPN Transistor
(Motorola)
2N2845 thru 2N2848 (SILlC()N)
CASE 22
(TO-18)
2N2845 2N2847
NPN silicon annular transistors designed for highspeed, medium-power saturated switching.
2N2847 - NPN Transistor
(Motorola)
2N2845 thru 2N2848 (SILlC()N)
CASE 22
(TO-18)
2N2845 2N2847
NPN silicon annular transistors designed for highspeed, medium-power saturated switching.
2N2848 - NPN Transistor
(Motorola)
2N2845 thru 2N2848 (SILlC()N)
CASE 22
(TO-18)
2N2845 2N2847
NPN silicon annular transistors designed for highspeed, medium-power saturated switching.
2N2800 - PNP Transistor
(Motorola)
2N2800 (SILICON)
2N2801 2N2837 2N2838
CASE 22 (TO-18)
2N2837 2N2838
PNP silicon annular transistors for medium-speed switching applications_
2N2800.
2N2800 - Small Signal Transistors
(Central Semiconductor)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION
VCBO (V)
2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH .
