2N5338X
Seme LAB
15.53kb
Npn silicon transistors. 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) The 2N5339X silicon expitaxial planar NPN t
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📁 Related Datasheet
2N5338 - Bipolar NPN Device
(Seme LAB)
2N5338
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
2N5338 - NPN SILICON TRANSISTOR
(Central Semiconductor Corp)
2N5336 2N5338 2N5337 2N5339
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5336 series devices.
2N5338 - HIGH SPEED NPN TRANSISTOR
(SSDI)
.
2N5330 - NPN Power Transistor
(CRYSTALONCS)
.
2N5330 - HIGH SPEED NPN TRANSISTOR
(SSDI)
.
2N5331 - NPN Transistor
(SSDI)
25 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mh.
2N5333 - Bipolar PNP Device
(Seme LAB)
2N5333
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package..
2N5333 - PNP SILICON POWER TRANSISTOR
(Central Semiconductor)
2N5333 PNP SILICON POWER TRANSISTOR
CentralTM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5333 is a PNP Silicon Power Transistor man.
2N5333 - SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR
(TT)
SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR
2N5333
• Low Saturation Voltage • Fast Switching • Hermetic TO39 Metal package. • For power amplifier an.
2N5334 - NPN SILICON TRANSISTOR
(Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
.