BDY71
Seme LAB
11.25kb
Bipolar npn device.
TAGS
📁 Related Datasheet
BDY71 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
BDY71
DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation-
: PC= 29W @TC= 25℃ ·Minimum Lo.
BDY71X - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
BDY71X
DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation-
: PC= 29W @TC= 25℃ ·Minimum L.
BDY71X - Bipolar NPN Device
(Seme LAB)
BDY71X
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar NPN Device in a Herm.
BDY71X - SILICON PLANAR EPITAXIAL NPN TRANSISTOR
(TT)
SILICON PLANAR EPITAXIAL NPN TRANSISTOR
BDY71X
• High Power • Hermetic TO-66 Metal Package • Ideally suited for Switching
and Amplifier Applications .
BDY72 - Bipolar NPN Device
(Seme LAB)
BDY72
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetical.
BDY72 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BDY72
DESCRIPTION ·Contunuous Collector Current-IC= 3A ·Collector Power Dissipation-
: PC= 25W @TC= 25℃ Collector-E.
BDY73 - Bipolar NPN Device
(Seme LAB)
BDY73
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BDY73 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=50-150@IC = 4A ·Collector-Emitter Saturation Voltage.
BDY74 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min.) ·Collector.
BDY75 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V (Min) ·Low Collector-Emitter Saturation Voltage ·E.
