BDY71X Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

BDY71X

Manufacturer:

Inchange Semiconductor

File Size:

210.43kb

Download:

📄 Datasheet

Description:

Silicon npn power transistor.

  • Continuous Collector Current-IC= 4A
  • Collector Power Dissipation- : PC= 29W @TC= 25℃
  • Minimum Lot-to-Lot var

  • Datasheet Preview: BDY71X 📥 Download PDF (210.43kb)
    Page 2 of BDY71X

    BDY71X Application

    • Applications
    • Designed for accordance with the requirements of BS, CECC and JAN,JANTX, JANTXV and JANS specifications。 ABSOLUTE MAXIMUM RAT

    TAGS

    BDY71X
    Silicon
    NPN
    Power
    Transistor
    Inchange Semiconductor

    📁 Related Datasheet

    BDY71 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor BDY71 DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation- : PC= 29W @TC= 25℃ ·Minimum Lo.

    BDY71 - Bipolar NPN Device (Seme LAB)
    BDY71 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Herme.

    BDY71X - Bipolar NPN Device (Seme LAB)
    BDY71X Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Herm.

    BDY71X - SILICON PLANAR EPITAXIAL NPN TRANSISTOR (TT)
    SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X • High Power • Hermetic TO-66 Metal Package • Ideally suited for Switching and Amplifier Applications .

    BDY72 - Bipolar NPN Device (Seme LAB)
    BDY72 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetical.

    BDY72 - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor BDY72 DESCRIPTION ·Contunuous Collector Current-IC= 3A ·Collector Power Dissipation- : PC= 25W @TC= 25℃ Collector-E.

    BDY73 - Bipolar NPN Device (Seme LAB)
    BDY73 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

    BDY73 - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=50-150@IC = 4A ·Collector-Emitter Saturation Voltage.

    BDY74 - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) ·Collector.

    BDY75 - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·Low Collector-Emitter Saturation Voltage ·E.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts