BDY71 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BDY71 .
Continuous Collector Current-IC= 4A. Collector Power Dissipation- : PC= 29W @TC= 25℃. Minimum Lot-to-Lot variations for robust device per.

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Datasheet Specifications

Part number: BDY71
Manufacturer: Inchange Semiconductor
File Size: 210.02 KB
Datasheet: BDY71-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEX Collector-Emitter Voltage VBE= -1.5V 90 V VCER Collector-Emitter Voltage RBE= 100Ω 60 V VCEO Collector-Emitter

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BDY71 Silicon NPN Power Transistor Inchange Semiconductor

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