BUT90
Seme LAB
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Bipolar npn device.
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BUT90 - HIGH POWER NPN SILICON TRANSISTOR
(STMicroelectronics)
® BUT90
HIGH POWER NPN SILICON TRANSISTOR
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s HIGH RUGGEDNESS s LOW COLLECTOR EMI.
BUT91 - Bipolar NPN Device
(Seme LAB)
.DataSheet.co.kr
BUT91
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15.
BUT92 - FAST-SWITCHING POWER TRANSISTOR
(STMicroelectronics)
® BUT92
FAST-SWITCHING POWER TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR s hFE > 10 AT IC =35A s HIGH EFFICIENCY SWITCHING .
BUT92 - Bipolar NPN Device
(Seme LAB)
.DataSheet.co.kr
BUT92
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15.
BUT92A - Bipolar NPN Device
(Seme LAB)
.DataSheet.co.kr
BUT92A
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.1.
BUT92AS - Bipolar NPN Device
(Seme LAB)
.DataSheet.co.kr
BUT92AS
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9..
BUT93 - Silicon NPN Power Transistor
(Inchange Semiconductor)
.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT93
DESCRIPTION ·High Voltage ·High Speed.
BUT100 - HIGH POWER NPN SILICON TRANSISTOR
(STMicroelectronics)
® BUT100
HIGH POWER NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEE.
BUT100 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BUT100
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 125V(Min.) ·Hight Current Capability ·Hight .
BUT11 - Silicon diffused power transistors
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BUT11; BUT11A Silicon diffused power transistors
Product specification Supersedes data of February 1996 File under.