* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* USEFUL PO at 1 GHz
* LOW NOISE
* HIGH GAIN
* 13 dB MINIMUM APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase =
D1007UK
Seme LAB
89.18 KB
Metal gate rf silicon fet.
TetraFET
D1007UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B (2 pls)
E
A
C2
3
1
5
4
G (4 pls) F
O
K D
PIN 1 PIN 3 PIN 5
H.
📁 Related Datasheet
D1007 - 2SD1007
(Renesas)
DATA SHEET
SILICON TRANSISTOR
2SD1006, 1007
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
The information in this document is subject to change wi.
D1000 - 2SD1000
(Renesas)
.
D1001 - 2SD1001
(Renesas)
.
D1001UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1001UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2
D
3
E
F
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS R.
D1002UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1002UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2
D
3
E
F
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS R.
D1003UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1003UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A B
1
2
4
3
M
G
C
D E F
HK
PIN 1 PIN 3
SOURCE SOURCE
DM
PIN 2 .
D1004 - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D (2 pls) E
B
1
2
3
A
G
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 8.
D10040180GT - GaAs Power Doubler
(PDI)
..
Product Specification
D10040180GT
GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
FEATURES
• • • .
