D1209 Datasheet - Seme LAB

D1209 METAL GATE RF SILICON FET

D1209 Features

* SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N

* SUITABLE FOR BROAD BAND APPLICATIONS

* LOW Crss

* SIMPLE BIAS CIRCUITS

* LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.51 6.47 18.41

Datasheet Details

D1209

Seme LAB

16.33 KB

Metal gate rf silicon fet.

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D1209 D1209 METAL GATE SILICON FET Seme LAB

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