* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 10 dB MINIMUM APPLICATIONS
* VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
D2210UK
Seme LAB
87.04 KB
Metal gate rf silicon fet.
TetraFET
D2210UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
2 1 A
3
F (2 pls)
H J
N (typ)
B
D (2 pls)
MI
PIN 1 PIN 3
SOURCE GATE.
📁 Related Datasheet
D2210 - N-Channel 20V MOSFET
(VBsemi)
D2210-VB
D2210-VB Datasheet
N-Channel 200 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) 200
RDS(on) () 0.055 at VGS = 10 V
ID (A) 30
D.
D221 - D200 Series / DC/DC Converters
(MicroPower Direct)
D200 Series
Single & Dual Output Miniature, 2W SIP DC/DC Converters
Electrical Specifications
Specifications typical @ +25°C, nominal input voltage & ra.
D2211UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2211UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
D
E
B
8
7
6
F
5
O
J
K
L
C
1 2
A
3 4
Q
N
M
I P
H
G
DBC1 Packag.
D2212UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2212UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
2 1 A
3
F (2 pls)
H J
N (typ)
B
D (2 pls)
MI
PIN 1 PIN 3
SOURCE GAT.
D2213UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
LAB
MECHANICAL DATA
A K B (2 pls) E
SEME
D2213UK
METAL GATE RF SILICON FET
C 1
2
3
D 5 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS R.
D2214UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2214UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
A
B
D ( 2 p ls )
E
G
H
PIN 1 PIN 3
SOURCE GATE
F
DP
PIN 2.
D2217 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD2217
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPE.
D2218 - 2SD2218
(Sanyo)
Ordering number:EN3363
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1467/2SD2218
General High-Current Switching Applications
Applications
· Relay.
