D2212UK Datasheet (Seme LAB) - METAL GATE RF SILICON FET

D2212UK, METAL GATE RF SILICON FET

TetraFET D2212UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C 2 1 A 3 F (2 pls) H J N (typ) B D (2 pls) MI PIN 1 PIN 3 SOURCE GATE E KG DP PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° Tol.

Inches Tol.

0.25 0.650 0.010 0.13 0.250 0.005 5° 45° 5° 0.13 0.130 0.005 0.08 0.745 0.003 0.13 0.060 0.005 0.13 0.085 0.005 0.08 0.560 0.003 0.13 0.060 0.005 0.13 0.250 0.005 0

D2212UK Features

* SIMPLIFIED AMPLIFIER DESIGN

* SUITABLE FOR BROAD BAND APPLICATIONS

* LOW Crss

* SIMPLE BIAS CIRCUITS

* LOW NOISE

* HIGH GAIN

* 10 dB MINIMUM APPLICATIONS

* VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°