D2211UK Datasheet (Seme LAB) - METAL GATE RF SILICON FET

D2211UK, METAL GATE RF SILICON FET

TetraFET D2211UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D E B 8 7 6 F 5 O J K L C 1 2 A 3 4 Q N M I P H G DBC1 Package PIN 1 Source PIN 5 Source PIN 2 Drain PIN 6 Gate PIN 3 Drain PIN 7 Gate PIN 4 Source PIN 8 Source DIM mm Tol.

Inches Tol.

A 6.47 0.08 .255 .003 B 0.76 0.08 .030 .003 C 45° 5° 45° 5° D 0.76 0.08 .030 .003 E 1.14 0.08 .045 .003 F 2.67 0.08 .105 .003 G 11.73 0.13 .462 .005 H 8.43 0.08 .332 .003 I 7.9

D2211UK Features

* SIMPLIFIED AMPLIFIER DESIGN

* SUITABLE FOR BROAD BAND APPLICATIONS

* LOW Crss

* LOW NOISE

* HIGH GAIN APPLICATIONS

* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation