DMD1029-A - METAL GATE RF SILICON FET
TetraFET DMD1029 DMD1029-A METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) 1 HD B 2 3 5 4 E (4 pls) F I G (typ) P (2 pls) A PIN 1 PIN 3 PIN 5 NM O D1 SOURCE (COMMON) DRAIN 2 GATE 1 DIM Millimetres Tol.
A 15.24 0.50 B 10.80 0.13 C 45° 5° D 9.78 0.13 E 8.38 0.13 F 27.94 0.13 G 1.52R 0.13 H 10.16 0.15 I 21.84 0.23 J 0.10 0.02 K 1.96 0.13 M 1.02 0.13 N 4.45 0.38 O 34.04 0.13 P 1.63R 0.13 JK PIN 2 PIN 4 DRAIN 1 GATE 2 Inches 0.600 0.425 45° 0.38
DMD1029-A Features
* SUITABLE FOR BROAD BAND APPLICATIONS
* SIMPLE BIAS CIRCUITS
* ULTRA-LOW THERMAL RESISTANCE
* BeO FREE
* LOW Crss
* HIGH GAIN
* 16 dB MINIMUM APPLICATIONS
* VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz ABSOLUTE MAXIMUM RATINGS (Tcase
