MJ11029 Datasheet - Seme LAB

MJ11029 COMPLEMENTARY DARLINGTON POWER TRANSISTOR

MJ11029 Features

* 30 .15 (1.187 ) 1 1 6 .89 (0.665) 2

* HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A

* CURVES TO 100A (Pulsed)

* DIODE PROTECTION TO RATED IC

* MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE

* EMITTER SHUNT RESISTOR 4.1 (0.161 +0.4

Datasheet Details

MJ11029

Seme LAB

59.19 KB

Complementary darlington power transistor.

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MJ11029 COMPLEMENTARY DARLINGTON POWER TRANSISTOR Seme LAB

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