* 30 .15 (1.187 ) 1 1 6 .89 (0.665) 2
* HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A
* CURVES TO 100A (Pulsed)
* DIODE PROTECTION TO RATED IC
* MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE
* EMITTER SHUNT RESISTOR 4.1 (0.161 +0.4
MJ11030
Seme LAB
59.19 KB
Complementary darlington power transistor.
NPN
PNP MJ11029 MJ11031 MJ11033
LAB
MECHANICAL DATA Dimensions in mm (inches)
25.4 (1.0) 10.92 (0.430) 1.57 (0.062)
SEME
MJ11028 MJ11030 MJ11032
.
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MJ11032 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
