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VP1008CSM4 - P-CHANNEL ENHANCEMENT MODE MOSFET

VP1008CSM4 Description

www.DataSheet4U.com VP1008CSM4 MECHANICAL DATA Dimensions in mm (inches) P *CHANNEL ENHANCEMENT MODE MOSFET 1.40 ± 0.15 (0.055 ± 0.006) 0.25.

VP1008CSM4 Features

* BVDSS =100V
* ID = 300mA 0.23 min. (0.009) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) 4 1
* Hermetic Surface Mount Package
* Screening Option Available 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08

VP1008CSM4 Applications

* ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS VGS ID IDM PD TSTG , TJ NOTE: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. Drain
* Source Voltage Gate
* Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation

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Datasheet Details

Part number
VP1008CSM4
Manufacturer
Seme LAB
File Size
57.20 KB
Datasheet
VP1008CSM4_SemeLAB.pdf
Description
P-CHANNEL ENHANCEMENT MODE MOSFET

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P-CHANNEL ENHANCEMENT MODE MOSFET Seme LAB
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