HRD180N10K Datasheet - SemiHow

HRD180N10K N-Channel MOSFET

HRD180N10K Features

*  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 85 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 15 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ =15 mΩ ID = 65 A D-P

HRD180N10K Datasheet (955.92 KB)