HRD50N06K Datasheet - SemiHow

HRD50N06K N-Channel MOSFET

HRD50N06K Features

*  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 11.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 11.5mΩ ID = 40 A

HRD50N06K Datasheet (767.85 KB)