HRD80N06K Datasheet - SemiHow

HRD80N06K N-Channel MOSFET

HRD80N06K Features

*  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 90 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 6.3 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 6.3mΩ ID = 114 A D

HRD80N06K Datasheet (0.95 MB)