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SEMIX302KD16S Rectifier Diode Module

SEMIX302KD16S Description

SEMiX302KD16s Absolute Maximum Ratings Symbol IFAV IFSM i2t Conditions Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C Values 3.

SEMIX302KD16S Features

* Terminal height 17 mm
* Chips soldered directly to isolated substrate Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 250 per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.045 5 5 5
* 9,81 K/W K/W Nm Nm m/s2 g Tj = 25 °C,

SEMIX302KD16S Applications

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* Input Bridge Rectifier for AC/DC motor control
* Power supply KD © by SEMIKRON Rev. 26
* 25.03.2010 1 SEMiX302KD16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig. 3L:

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Rectifier Diode Module Semikron International
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