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SEMIX352GAL128DS IGBT

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Description

SEMiX352GAL128Ds SEMiX®2s SPT IGBT Modules SEMiX352GAL128Ds wwPwr.eDlaimtainShaerey tD4Ua.ctaom .

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Features

* Homogeneous Si
* SPT = Soft-Punch-Through technology
* VCE(sat) with positive temperature coefficient
* High short circuit capability

Applications

* AC inverter drives
* UPS
* Electronic welders up to 20 kHz Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V Inverse diode IF Tj = 150

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