SEMIX353GB126HDS Datasheet - Semikron International

SEMIX353GB126HDS IGBT

SEMiX353GB126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 364 256 225 450 -20 20 10 -40 150 329 228 225 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 1700 -40 150 600 -40 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 3s Trench IGBT Modules SEMiX353GB126HDs www.

SEMIX353GB126HDS Features

* Homogeneous Si

* Trench = Trenchgate technology

* VCE(sat) with positive temperature coefficient

* High short circuit capability

* UL recognised file no. E63532 Typical Applications

* AC inverter drives

* UPS

* Electronic Weldin

SEMIX353GB126HDS Datasheet (404.94 KB)

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Datasheet Details

Part number:

SEMIX353GB126HDS

Manufacturer:

Semikron International

File Size:

404.94 KB

Description:

Igbt.

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