SEMIX353GD126HDC IGBT

Semikron International

Description

SEMiX353GD126HDc Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diod.

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Datasheet Specifications

Part number: SEMIX353GD126HDC
Manufacturer: Semikron International
File Size: 399.85 KB
Datasheet: SEMIX353GD126HDC_SemikronInternational.pdf
Description: IGBT

Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient
* High short circuit capability

Applications

* br>
* AC inverter drives
* UPS
* Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 225 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VG

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SEMIX353GD126HDC IGBT Semikron International

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