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SEMIX653GD176HDC Trench IGBT

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Description

SEMiX653GD176HDc SEMiX® 33c Trench IGBT Modules SEMiX653GD176HDc .

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Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient

Applications

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* AC inverter drives
* UPS
* Electronic welders Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc

SEMIX653GD176HDC Distributors

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