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SEMIX653GAL176HDS IGBT

SEMIX653GAL176HDS Description

SEMiX653GAL176HDs SEMiX® 3s Trench IGBT Modules SEMiX653GAL176HDs .

SEMIX653GAL176HDS Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient

SEMIX653GAL176HDS Applications

* br>
* AC inverter drives
* UPS
* Electronic welders Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Inverse diode IF T

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