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SEMIX603GB066HDS IGBT

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Description

SEMiX603GB066HDs SEMiX® 3s Trench IGBT Modules SEMiX603GB066HDs .

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Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient

Applications

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* Matrix Converter
* Resonant Inverter
* Current Source Inverter Remarks
* Case temperature limited to TC=125°C max.
* Product reliability results are valid for Tj=150°C
* For short circuit: Soft RGoff recommended
* Take care of over-volta

SEMIX603GB066HDS Distributors

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