SEMiX603GB12E4SiCp Datasheet - Semikron

SEMiX603GB12E4SiCp - IGBT

SEMiX603GB12E4SiCp Features

* With Silicon Carbide (SiC) Schottky diodes

* Homogeneous Si

* Trench = Trenchgate technology

* VCE(sat) with positive temperature coefficient

* Press-fit pins as auxiliary contacts

* Thermally optimized ceramic

* UL recognized, file no. E6353

Datasheet Details

SEMiX603GB12E4SiCp

Semikron

598.75 KB

Igbt.

SEMiX603GB12E4SiCp Distributor

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