SEMiX603GB17E4I30p
Semikron
1.14MB
Igbt.
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SEMiX603GB17E4p - IGBT
(Semikron)
SEMiX603GB17E4p
SEMiX® 3p
SEMiX603GB17E4p Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient.
SEMiX603GB12E4I25p - IGBT
(Semikron)
SEMiX603GB12E4I25p
SEMiX® 3p shunt
Trench IGBT Modules
SEMiX603GB12E4I25p Features*
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with.
SEMiX603GB12E4Ip - IGBT
(Semikron)
SEMiX603GB12E4Ip
SEMiX® 3p shunt
Trench IGBT Modules
SEMiX603GB12E4Ip Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with posi.
SEMiX603GB12E4p - IGBT
(Semikron)
SEMiX603GB12E4p
SEMiX® 3p
Trench IGBT Modules
SEMiX603GB12E4p Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive tem.
SEMiX603GB12E4SiCp - IGBT
(Semikron)
SEMiX603GB12E4SiCp
SEMiX® 3p
Trench IGBT Modules
SEMiX603GB12E4SiCp Features
• With Silicon Carbide (SiC) Schottky diodes
• Homogeneous Si • Trench =.
SEMiX603GB12M7p - IGBT
(Semikron)
SEMiX603GB12M7p
SEMiX® 3p
Trench IGBT Modules
SEMiX603GB12M7p
Features*
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive te.
SEMiX603GB12Vs - IGBT
(Semikron International)
SEMiX603GB12Vs
SEMiX® 3s
SEMiX603GB12Vs
Features
• Homogeneous Si • VCE(sat) with positive temperature
coefficient • High short circuit capability • .
SEMIX603GB066HD - IGBT
(Semikron International)
SEMiX 603GB066HD
..
Absolute Maximum Ratings Symbol Conditions IGBT
$ $ $ # 4
-6 '( 8. ) 6 - &(. ) .
SEMIX603GB066HDS - IGBT
(Semikron International)
SEMiX603GB066HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX603GB066HDs
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
SEMIX603GAL066HD - IGBT
(Semikron)
SEMiX 603GB066HD
Absolute Maximum Ratings Symbol Conditions IGBT
$ $ $ # 4
-6 '( 8. ) 6 - &(. ) '( 8. ) 6 - .