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SEMiX603GB12E4I25p IGBT

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Description

SEMiX603GB12E4I25p SEMiX® 3p shunt Trench IGBT Modules SEMiX603GB12E4I25p .

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Features

* br>
* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient
* High short circuit capability
* Press-fit pins as auxiliary contacts
* Thermally optimized ceramic
* Current sensing shunt resistor

Applications

* AC inverter drives
* UPS
* Renewable energy systems Remarks
* Product reliability results are valid for Tj=150°C
* Visol between temperature sensor and power section is only 2500V
* For storage and case temperature with TIM see document “TP(
* ) SE

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