SEMiX151GD12Vs Datasheet - Semikron International

SEMiX151GD12Vs IGBT

SEMiX151GD12Vs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 231 176 150 450 -20 20 Tj = 125 °C 10 -40 175 Tc = 25 °C Tc = 80 °C 189 141 150 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 900 -40 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 13 VGES tpsc Tj IF IFnom Inverse diode SEMiX151GD12Vs F.

SEMiX151GD12Vs Features

* Homogeneous Si

* VCE(sat) with positive temperature coefficient

* High short circuit capability

* UL recognised file no. E63532 Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications

* AC inverter drives

* UPS

* Elect

SEMiX151GD12Vs Datasheet (338.53 KB)

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Datasheet Details

Part number:

SEMiX151GD12Vs

Manufacturer:

Semikron International

File Size:

338.53 KB

Description:

Igbt.

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