SEMiX151GD12E4s
Semikron
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Igbt.
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SEMIX151GD126HDS - IGBT
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Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
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SEMIX151GD12T4S - IGBT
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Absolute Maximum Ratings Symbol Conditions IGBT
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- () * - '2) * 1 563+1
:.. ; 8 < (. ;
=.
SEMiX151GD12Vs - IGBT
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IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc =.
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Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
SEMiX151GAL12E4s - IGBT
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Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
SEMIX151GAL12T4S - IGBT
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Absolute Maximum Ratings Symbol Conditions IGBT
1 1 56 8
- () * - '2) * 1 563+1
:.. ; 8 < (. ;
=.
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.
SEMiX151GAR12E4s - IGBT
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Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
SEMIX151GAR12T4S - IGBT
(Semikron International)
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Absolute Maximum Ratings Symbol Conditions IGBT
1 1 56 8
- () * - '2) * 1 563+1
:.. ; 8 < (. ;
=.
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