SEMIX101GD066HDS, Semikron International
SEMiX101GD066HDs
SEMiX® 13
Trench IGBT Modules
SEMiX101GD066HDs
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
SEMIX101GD126HDS, Semikron International
SEMiX101GD126HDs
SEMiX® 13
Trench IGBT Modules
SEMiX101GD126HDs
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
SEMiX101GD12Vs, Semikron International
SEMiX101GD12Vs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc =.