Part number: SEMiX105GD12T4
Manufacturer: Semikron
File Size: 290.89KB
Download: 📄 Datasheet
Description: IGBT
* Solderless assembling solution with PressFIT signal pins and screw power terminals
* IGBT 4 Trench Gate Technology
* VCE(sat) with positive temperature
coef.
* AC inverter drives
* UPS
* Electronic Welding
Remarks
* Product reliability results are valid for Tjo.
Image gallery
TAGS
📁 Related Datasheet
SEMIX101GD066HDS - IGBT
(Semikron International)
SEMiX101GD066HDs
SEMiX® 13
Trench IGBT Modules
SEMiX101GD066HDs
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
SEMIX101GD126HDS - IGBT
(Semikron International)
SEMiX101GD126HDs
SEMiX® 13
Trench IGBT Modules
SEMiX101GD126HDs
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
SEMIX101GD128DS - IGBT
(Semikron International)
SEMiX101GD128Ds
SEMiX®13
SPT IGBT Modules
SEMiX101GD128Ds
Preliminary Data Features
• Homogeneous Si • SPT = Soft-Punch-Through technology • VCE(sat).
SEMiX101GD12E4s - IGBT
(Semikron International)
SEMiX101GD12E4s
SEMiX® 13
Trench IGBT Modules
SEMiX101GD12E4s
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive tem.
SEMIX101GD12T4S - IGBT
(Semikron International)
SEMiX 101GD12T4s
Absolute Maximum Ratings Symbol Conditions IGBT
1 156 8
- () * - '2) * 1567+1
3.. : 8 ; (. :
<.
SEMiX101GD12Vs - IGBT
(Semikron International)
SEMiX101GD12Vs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc =.
SEMiX106GD12T4p - IGBT
(Semikron)
SEMiX106GD12T4p
SEMiX® 6p
Trench IGBT Modules
SEMiX106GD12T4p
Features*
• Press Fit • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with.
SEMIX141KT16S - Rectifier Thyristor
(Semikron International)
SEMiX141KT16s
SEMiX® 1s
Rectifier Thyristor Module SEMiX141KT16s
Features
• Terminal height 17 mm • Chips soldered directly to isolated
substrate
Typ.
SEMiX151GAL12E4s - IGBT
(Semikron International)
SEMiX151GAL12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GAL12E4s
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
SEMIX151GAL12T4S - IGBT
(Semikron International)
SEMiX 151GB12T4s
Absolute Maximum Ratings Symbol Conditions IGBT
1 156 8
- () * - '2) * 1563+1
:.. ; 8 < (. ;
=.
