Part number: SEMiX101GD12E4s
Manufacturer: Semikron International
File Size: 524.47KB
Download: 📄 Datasheet
Description: IGBT
* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature
coefficient
* High short circuit capability
* UL recognized, fi.
* AC inverter drives
* UPS
* Electronic Welding
Remarks
* Case temperature limited to TC=125°C max.
Image gallery
TAGS
📁 Related Datasheet
SEMIX101GD126HDS - IGBT
(Semikron International)
SEMiX101GD126HDs
SEMiX® 13
Trench IGBT Modules
SEMiX101GD126HDs
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
SEMIX101GD128DS - IGBT
(Semikron International)
SEMiX101GD128Ds
SEMiX®13
SPT IGBT Modules
SEMiX101GD128Ds
Preliminary Data Features
• Homogeneous Si • SPT = Soft-Punch-Through technology • VCE(sat).
SEMIX101GD12T4S - IGBT
(Semikron International)
SEMiX 101GD12T4s
Absolute Maximum Ratings Symbol Conditions IGBT
1 156 8
- () * - '2) * 1567+1
3.. : 8 ; (. :
<.
SEMiX101GD12Vs - IGBT
(Semikron International)
SEMiX101GD12Vs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc =.
SEMIX101GD066HDS - IGBT
(Semikron International)
SEMiX101GD066HDs
SEMiX® 13
Trench IGBT Modules
SEMiX101GD066HDs
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
SEMiX105GD12T4 - IGBT
(Semikron)
SEMiX105GD12T4
SEMiX® 5
Trench IGBT Modules
Evaluation Sample SEMiX105GD12T4 Target Data Features
• Solderless assembling solution with PressFIT sign.
SEMiX106GD12T4p - IGBT
(Semikron)
SEMiX106GD12T4p
SEMiX® 6p
Trench IGBT Modules
SEMiX106GD12T4p
Features*
• Press Fit • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with.
SEMIX141KT16S - Rectifier Thyristor
(Semikron International)
SEMiX141KT16s
SEMiX® 1s
Rectifier Thyristor Module SEMiX141KT16s
Features
• Terminal height 17 mm • Chips soldered directly to isolated
substrate
Typ.
SEMiX151GAL12E4s - IGBT
(Semikron International)
SEMiX151GAL12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GAL12E4s
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive t.
SEMIX151GAL12T4S - IGBT
(Semikron International)
SEMiX 151GB12T4s
Absolute Maximum Ratings Symbol Conditions IGBT
1 156 8
- () * - '2) * 1563+1
:.. ; 8 < (. ;
=.
