SEMiX101GD12Vs Datasheet - Semikron International

SEMiX101GD12Vs IGBT

SEMiX101GD12Vs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 159 121 100 300 -20 20 Tj = 125 °C 10 -40 175 Tc = 25 °C Tc = 80 °C 121 91 100 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 300 550 -40 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 13 VGES tpsc Tj IF IFnom Inverse diode SEMiX101GD12Vs Fe.

SEMiX101GD12Vs Features

* Homogeneous Si

* VCE(sat) with positive temperature coefficient

* High short circuit capability

* UL recognised file no. E63532 Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications

* AC inverter drives

* UPS

* Elect

SEMiX101GD12Vs Datasheet (342.73 KB)

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Datasheet Details

Part number:

SEMiX101GD12Vs

Manufacturer:

Semikron International

File Size:

342.73 KB

Description:

Igbt.

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