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SEMiX703GAL126HDs IGBT

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Description

SEMiX703GAL126HDs SEMiX®3s Trench IGBT Modules SEMiX703GAL126HDs Preliminary Data .

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Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient
* High short circuit capability

Applications

* AC inverter drives
* UPS
* Electronic Welding Remarks
* Case temperatur limited to TC=125°C max.
* Not for new design GAL © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC ICRM VGES tpsc Tj Tj = 150°C ICRM = 2xICnom VCC = 600V VGE ≤ 2

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