SKM50GAL12T4 Datasheet - Semikron International

SKM50GAL12T4 IGBT

SKM50GAL12T4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 81 62 50 150 -20 20 Tj = 150 °C 10 -40 175 Tc = 25 °C Tc = 80 °C 65 49 50 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 150 270 -40 175 Tc = 25 °C Tc = 80 °C 65 49 50 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 150 270 -40 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 200 -40 125 4000 V A A A A V µs °C A A A A A °C.

SKM50GAL12T4 Features

* IGBT4 = 4. generation fast trench IGBT (Infineon)

* CAL4 = Soft switching 4. generation CAL-diode

* Isolated copper baseplate using DBC technology (Direct Bonded Copper)

* Increased power cycling capability

* With integrated gate resistor

* For highe

SKM50GAL12T4 Datasheet (470.79 KB)