SKiM609GAL12E4 Datasheet - Semikron International

SKiM609GAL12E4 IGBT

SKiM609GAL12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Ts = 25 °C Ts = 70 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C 1200 748 608 600 1800 -20 20 10 -40 175 139 110 150 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 900 -40 175 Ts = 25 °C Ts = 70 °C 1397 1107 1350 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 4050 6480 -40 175 700 -40 125 AC sinus 50 Hz, t = 1 min 2500 V A A A A V .

SKiM609GAL12E4 Features

* IGBT 4 Trench Gate Technology

* Solderless sinter technology

* VCE(sat) with positive temperature coefficient

* Low inductance case

* Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate

* Pressure contact technology forthermal contacts and

SKiM609GAL12E4 Datasheet (187.11 KB)