* IGBT 4 Trench Gate Technology
* Solderless sinter technology
* VCE(sat) with positive temperature coefficient
* Low inductance case
* Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate
* Pressure contact technology forthermal contacts and
SKiM609GAL12E4 Datasheet (187.11 KB)
SKiM609GAL12E4
Semikron International
187.11 KB
Igbt.
SKiM609GAL12E4
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode .
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