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SKiM609GAL12E4 IGBT

SKiM609GAL12E4 Description

SKiM609GAL12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode .

SKiM609GAL12E4 Features

* IGBT 4 Trench Gate Technology
* Solderless sinter technology
* VCE(sat) with positive temperature coefficient
* Low inductance case
* Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate
* Pressure contact technology forthermal contacts and

SKiM609GAL12E4 Applications

* Automotive inverter
* High reliability AC inverter wind
* High reliability AC inverter drives Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25

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