SKiM601TMLI12E4B

IGBT

Semikron

* IGBT 4 Trench Gate Technology

* Solder technology

* VCE(sat) with positive temperature coefficient

* Low inductance case

* Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate

* Pressure contact technology for thermal contacts

* Sp

SKiM601TMLI12E4B

Semikron

1.02 MB

Igbt.

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SKiM601TMLI12E4B IGBT Semikron

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