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SEMiX305MLI12E4V2 IGBT

SEMiX305MLI12E4V2 Description

SEMiX305MLI12E4V2 SEMiX® 5 3-Level NPC IGBT-Module SEMiX305MLI12E4V2 .

SEMiX305MLI12E4V2 Features

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* Solderless assembling solution with PressFIT signal pins and screw power terminals
* IGBT 4 Trench Gate Technology
* VCE(sat) with positive temperature coefficient
* Low inductance case
* Reliable mechanical design with injection moulded terminals and r

SEMiX305MLI12E4V2 Applications

* Solar, Power Supply Remarks
* Case temperature limited to TC=125°C max.
* Product reliability results valid for Tj ≤150°C (recommended Tj,op= -40…+150°C)
* IGBT1: outer IGBTs T1 & T4
* IGBT2: inner IGBTs T2 & T3
* Diode1: outer diodes D1 & D4

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