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SKM50GB12V IGBT

SKM50GB12V Description

SKM50GB12V SEMITRANS® 2 SKM50GB12V Target Data .

SKM50GB12V Features

* V-IGBT = 6. Generation Trench V-IGBT (Fuji)
* CAL4 = Soft switching 4. Generation CAL-diode
* Insulated copper baseplate using DBC technology (Direct Copper Bonding)
* Increased power cycling capability
* With integrated gate resistor
* UL recognized

SKM50GB12V Applications

* br>
* AC inverter drives
* UPS
* Electronic welders Remarks
* Case temperature limited to Tc = 125°C max.
* Recommended Top = -40 +150°C
* Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC T

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