PE83H5Q N-Channel Enhancement Mode Power MOSFET

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Description

N-Channel Enhancement Mode Power MOSFET .
The PE83H5Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

Datasheet Specifications

Features

* VDS = 30V, ID = 150A RDS(ON) < 2.4mΩ @ VGS=10V RDS(ON) < 3.3mΩ @ VGS=4.5V
* High Power and current handing capability

PE83H5Q Distributors

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