1N5819-1 - Silicon Schottky Barrier Diode
(VPT)
1N5819-1, 1N5819UR-1
Silicon Schottky Barrier Diode
Features • Low Forward Voltage: 490 mV @ IF = 1.0 A • Available in JAN, JANTX, JANTXV and JANS per.
1N5819-1 - 1 Amp Schottky Barrier Rectifiers
(Microsemi)
1N5818-1, 1N5819-1, 1N6759-1 – 1N6761-1 and DSB1A20 – DSB1A100
Available on mercial
versions
1 Amp Schottky Barrier Rectifiers
Qualified per MIL-.
1N5819-G - Schottky Barrier Rectifiers
(Comchip)
Schottky Barrier Rectifiers
1N5817-G Thru. 1N5819-G
Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device
Features
-Metal-Semiconductor junc.
1N5819 - Low drop power Schottky rectifier
(STMicroelectronics)
1N5817, 1N5818, 1N5819
Low drop power Schottky rectifier
Features
■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast swit.
1N5819 - Schottky barrier diodes
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
1N5817; 1N5818; 1N5819 Schottky barrier diodes
Product specification Supersedes data of April 1992 .
1N5819 - SCHOTTKY BARRIER RECTIFIERS
(MotorolaInc)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 1N5817/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a lar.
1N5819 - 1.0A SCHOTTKY BARRIER RECTIFIER
(Diodes)
Pb
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for Transient Protection Low-Power Loss, High Efficienc.
1N5819 - Schottky Barrier Rectifiers
(Vishay Siliconix)
.vishay.
1N5817, 1N5818, 1N5819
Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
DO-41 (DO-204AL)
PRIMARY CHARACTERISTICS
IF.
1N5819 - SCHOTTKY BARRIER RECTIFIERS
(PAN JIT)
1N5817~1N5819
SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volt CURRENT
1 Ampere
FEATURES
• Plastic package has Underwriters Laboratory Flammabilit.
1N5819 - 1.0A SCHOTTKY BARRIER DIODE
(WON-TOP)
®
WON-TOP ELECTRONICS
Features
Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 25A Peak Low Power L.