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A1013 Datasheet - Shanghai

A1013 - Silicon PNP Epitaxial Transistor

A1013 Features

* High voltage: VCEO=160V

* Complementary to C2383 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base 1100um×1100um 210±20um 240um×240um Emitter 330um×260um Al Au 60um 6 inch Electrical Characteristics( Ta=25℃) Characterist

A1013_Shanghai.pdf