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H556 - PNP Silicon Transistor

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Part number H556
Manufacturer Shantou Huashan Electronic
File Size 72.18 KB
Description PNP Silicon Transistor
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    P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H556 ¨€ ¨€ T stg ¡ ª Tj¡ª PC¡ª VCBO¡ª VCEO¡ª SWITCHING AND AMPLIFIER ABSOLUTE MAXIMUM RATINGS£¨ Storage Temperature¡ - ¡ Junction Temperature¡ - ¡ - ¡ - ¡ - ¡ Collector Dissipation¡- ¡Collector-Base Voltage¡-¡ ¡¡- ¡- ¡- ¡¡- ¡- ¡¡-¡-¡-¡-¡¡- ¡- ¡¡¡¡- ¡- ¡¡¡- ¡¡- Ta=25¡æ£© -55~150¡æ 150¡æ 500mW -80V ¡- -65V -5V -100mA TO-92 Collector-Emitter Voltage¡- ¡- ¡Emitter-Base Voltage¡ - ¡ Collector Current¡ - ¡ - ¡ ¡- ¡- ¡¡-¡-¡-¡-¡- 1¨D Collector£¬ C 2¨D Base£¬ B 3¨D Emitter£¬ E V EBO ¡ ª ¡ ª IC¡ª ¨€ ELECTRICAL CHARACTERISTICS£¨ Characteristics Collector Cut-off Current Ta=25¡æ£© Typ Max Unit Test Conditions Symbol Min ICBO HFE VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) VBE(ON) -15 110 -90 -250 -0.7 -0.
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