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HFP630 N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan

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Description

Tstg Tj VD S S VDGR VG S ID PD Ta=25 (RGS=1M ) Tc=25 T c =25 Ta=25 N-Channel Enhancement Mode Field Effect Transistor HFP630 TO-220 55~150 55~150 .

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Datasheet Specifications

Part number: HFP630
Manufacturer: Shantou Huashan
File Size: 246.72 KB
Datasheet: HFP630-ShantouHuashan.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

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HFP630 N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan

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