HFP630 - N-Channel Enhancement Mode Field Effect Transistor
Tstg Tj VD S S VDGR VG S ID PD Ta=25 (RGS=1M ) Tc=25 T c =25 Ta=25 N-Channel Enhancement Mode Field Effect Transistor HFP630 TO-220 55~150 55~150 200V 500V ±3 0 V 9 .
0A 72W 1G 2D 3S µ ± µ ±3 µ
