HFP640 - 200V N-Channel MOSFET
(SemiHow)
HFP640
July 2005
HFP640
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A
FEATURES
Originative New Design Superior Avalanche .
HFP640 - N-Channel Enhancement Mode Field Effect Transistor
(Shantou Huashan)
Shantou Huashan Electronic Devices Co.,Ltd.
HFP640
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These power MOSFETs is .
HFP640G - N-Channel MOSFET
(SemiHow)
HFP640G
Feb 2015
HFP640G
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ ȍ ID = 18 A
FEATURES
Originative New Design Superior Avalanche .
HFP644 - 250V N-Channel MOSFET
(SemiHow)
HFP644
Dec 2005
HFP644
250V N-Channel MOSFET
BVDSS = 250 V RDS(on) typ ȍ ID = 14 A
FEATURES
Originative New Design Superior Avalanche R.
HFP60N06 - N-Channel Enhancement Mode Field Effect Transistor
(HUASHAN ELECTRONIC)
Shantou Huashan Electronic Devices Co.,Ltd.
HFP60N06
N-Channel Enhancement Mode Field Effect Transistor
█ Applications
• Servo motor control. • Pow.
HFP630 - N-Channel Enhancement Mode Field Effect Transistor
(Shantou Huashan)
Tstg Tj VD S S VDGR VG S ID PD
Ta=25
(RGS=1M ) Tc=25
T c =25
Ta=25
N-Channel Enhancement Mode Field Effect Transistor
HFP630
TO-220
55~150 55~150
.
HFP630 - 200V N-Channel MOSFET
(SemiHow)
HFP630
July 2005
HFP630
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9 A
FEATURES
Originative New Design Superior Avalanche R.
HFP630A - 200V N-Channel MOSFET
(SemiHow)
HFP630A
Jan 2016
HFP630A
200V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technolo.
HFP634 - 250V N-Channel MOSFET
(SemiHow)
HFP634
July 2005
HFP634
250V N-Channel MOSFET
BVDSS = 250 V RDS(on) typ ȍ ID = 8.1 A
FEATURES
Originative New Design Superior Avalanche.
HFP6N60U - N-Channel MOSFET
(SemiHow)
HFP6N60U
HFP6N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Ver.
