HFP640 - 200V N-Channel MOSFET
HFP640 Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.145 ȍ (Typ.) @VGS=10V 100% Avalanche Tes
